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| ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED) FEATURES * VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz Noise Figure, NF (dB) 3 GA NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 * LG = 0.25 m, WG = 200 m 2 18 1.5 15 DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate results in lower noise figure and high associated gain for space applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 1 12 0.5 NF 9 0 1 10 20 30 6 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Associated Gain at VDS = 2 V, IDS = 10 mA f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2 V, IDS = 10 mA VDS = 2 V, IDS = 20 mA Saturated Drain Current at VDS = 2 V, VGS = 0 V Pinch-Off Voltage at VDS = 2 V, IDS = 100 A Transconductance at VDS = 2 V, IDS = 10 mA Gate to Source Leakage Current at VGS = -3 V Thermal Resistance (Channel-to-Case) UNITS dB dB dB dB dBm dBm dB dB mA V mS A C/W 15 -2.0 45 MIN NE24200 00 (CHIP) TYP 0.35 0.6 16.0 11.0 9.5 11.0 11.8 12.8 40 -0.8 60 0.5 10 260 70 -0.2 MAX 0.7 GA1 10.0 P1dB G1dB IDSS VP gm IGSO RTH(CH-C)2 Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink. California Eastern Laboratories Associated Gain, GA (dB) * HIGH ASSOCIATED GAIN: GA = 11.0 dB typical at f = 12 GHz 2.5 21 NE24200 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGSO IDS IGRF TCH TSTG PT2 PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA A C C mW RATINGS 4.0 -3.0 IDSS 200 175 -65 to +175 200 TYPICAL NOISE PARAMETERS1,2 (TA = 25C) VDS = 2 V, IDS = 10 mA FREQ. (GHz) 1 2 4 6 8 10 12 14 16 18 20 NFOPT (dB) 0.30 0.31 0.35 0.38 0.43 0.50 0.60 0.71 0.85 1.0 1.2 1.5 1.8 2.1 2.4 2.8 GA (dB) 22.0 19.0 16.0 14.2 12.9 12.0 11.0 10.6 10.0 9.5 9.0 8.6 8.3 7.9 7.6 7.3 MAG 0.81 0.79 0.75 0.72 0.70 0.68 0.66 0.64 0.62 0.58 0.55 0.52 0.49 0.48 0.46 0.46 OPT ANG 10 17 31 45 59 77 92 108 126 140 153 164 175 -176 -168 -160 Rn/50 0.39 0.36 0.33 0.30 0.27 0.24 0.22 0.19 0.18 0.15 0.13 0.11 0.10 0.08 0.07 0.05 Notes: 1. Operation in excess of any one of these conditions may result in permanent damage . 2. With chip mounted on an alumina heat sink (size: 3 x 3 x 0.6 mm thick). TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 22 24 26 28 30 Power Dissipation, PT (mW) 200 Infinite Heat sink 150 100 50 Notes: 1. Noise Parameters include Bond Wires. Gate: Total 2 wires, 1 per bond pad 0.0132" (335 m) long each wire. Drain: Total 2 wires, 1 per bond pad 0.0094" (240 m) long each wire. Source: Total 4 wires, 2 per side, 0.0070" (178 m) long each wire. Wire: 0.0007" (17.8 m) dia. gold. 2. Data at 28 and 30 GHz is extrapolated, not measured. 0 0 25 50 75 100 125 150 175 200 Ambient Temperature, TA (C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 1.4 NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 14 Optimum Noise Figure, NFOPT (dB) VGS 0.0 V 1.2 13 -0.15 V 30 1 NF 0.8 GA 0.6 0.4 12 11 10 9 20 -0.30 V 10 -0.45 V -0.60 V 0 1 2 3 0.2 0 0 5 10 15 20 25 30 35 8 7 0 Drain to Source Voltage, VDS (V) Drain Current, IDS (mA) Associated Gain, GA (dB) Drain Current, IDS (mA) 40 NE24200 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25C) j50 j25 j100 +120 +90 5 4 +60 +150 3 2 +30 j10 S11 30 GHz 10 25 S22 30 GHz 50 100 S22 .1 GHz S11 .1 GHz 1 +180 - S21 .1 GHz .05 S12 .1 GHz .15 .20 .25 0 S12 S21 30 GHz 30 GHz 0 -j10 -150 -30 -j25 -j50 -j100 Coordinates in Ohms Frequency in GHz (VDS = 2 V, IDS = 10 mA) -120 -90 -60 NE24200 VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 0.1 0.2 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 26.0 28.0 30.0 MAG .999 .999 .999 .997 .989 .978 .967 .947 .927 .909 .891 .873 .856 .838 .820 .803 .786 .769 .753 .736 .721 .705 .691 .662 .635 .610 .587 .565 S11 ANG -1.3 -2.5 -6.1 -11.9 -23.1 -33.7 -43.7 -53.1 -62.2 -70.8 -79.0 -86.8 -94.3 -101.5 -108.4 -115.0 -121.4 -127.5 -133.5 -139.2 -144.7 -150.1 -155.3 -165.2 -174.6 176.5 168.1 160.0 MAG 5.039 5.021 4.966 4.876 4.702 4.535 4.375 4.222 4.075 3.933 3.797 3.666 3.540 3.418 3.301 3.188 3.079 2.973 2.871 2.773 2.677 2.585 2.495 2.324 2.163 2.011 1.867 1.732 S21 ANG 179.0 178.0 175.1 170.4 161.2 152.3 143.8 135.6 127.8 120.2 112.8 105.8 98.9 92.3 86.0 79.8 73.8 68.1 62.5 57.1 51.8 46.7 41.7 32.3 23.3 14.8 6.8 -1.00 MAG .002 .004 .008 .016 .030 .042 .052 .062 .071 .079 .086 .092 .099 .104 .109 .114 .119 .123 .127 .131 .135 .138 .142 .148 .153 .159 .163 .168 S12 ANG 89.2 88.6 86.7 83.6 77.3 70.9 64.7 58.8 53.1 47.8 42.9 38.3 34.2 30.4 26.9 23.8 20.9 18.4 16.1 14.0 12.1 10.4 8.9 6.3 4.2 2.4 1.0 0.1 MAG .617 .617 .617 .617 .614 .611 .606 .600 .593 .585 .576 .567 .557 .547 .536 .525 .514 .503 .492 .481 .470 .460 .450 .433 .419 .410 .406 .407 S22 ANG -0.7 -1.4 -4.2 -8.4 -15.4 -22.4 -29.4 -36.0 -41.2 -46.1 -51.0 -55.8 -60.5 -65.1 -69.6 -73.9 -78.2 -82.4 -86.6 -90.6 -94.5 -98.3 -102.0 -109.1 -115.9 122.3 -128.3 -133.9 .05 .03 .01 .01 .04 .07 .09 .12 .16 .20 .23 .26 .29 .32 .35 .37 .40 .43 .45 .48 .51 .54 .57 .64 .71 .76 .85 .92 K S21 (dB) 14.0 14.0 13.9 13.8 13.4 13.1 12.8 12.5 12.2 11.9 11.6 11.3 11.0 10.7 10.4 10.1 9.8 9.5 9.2 8.8 8.5 8.2 7.9 7.3 6.7 6.1 5.4 4.8 MAG2 (dB) 34.1 31.4 27.7 24.9 22.0 20.4 19.2 18.3 17.6 17.0 16.4 16.0 15.5 15.1 14.8 14.4 14.1 13.8 13.5 13.2 13.0 12.7 12.5 12.0 11.5 11.0 10.6 10.1 Notes: 1. S-Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 m) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 m) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 m) long each wire. Wire: 0.0007" (17.8 m) dia. gold. MAG = MAG = Maximum Available Gain MSG = Maximum Stable Gain |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE24200 TYPICAL COMMON SOURCE SCATTERING PARAMETERS1 (TA = 25C) VDS = 2 V, IDS = 20 mA FREQUENCY (GHz) MAG S11 ANG MAG S21 ANG MAG S12 ANG 89.3 88.6 86.5 83.2 76.8 70.7 65.0 59.7 54.7 50.0 45.7 41.7 38.0 34.6 31.4 28.6 26.0 23.6 21.5 19.6 17.9 16.4 15.1 12.8 11.1 9.6 8.4 7.1 MAG .554 .553 .550 .545 .535 .525 .516 .507 .498 .489 .481 .473 .465 .457 .450 .443 .436 .429 .423 .417 .411 .405 .399 .389 .380 .370 .362 .354 S22 ANG -0.6 -1.5 -3.7 -7.4 -15.5 -22.9 -30.3 -37.7 -42.2 -47.2 -52.1 -56.8 -61.4 -65.9 -70.3 -74.5 -78.6 -82.7 -86.6 -90.4 -94.1 -97.8 -101.3 -108.1 -114.6 -120.8 -126.7 -132.2 .007 .01 .03 .06 .09 .13 .16 .19 .23 .27 .31 .34 .37 .40 .43 .46 .48 .51 .54 .56 .59 .61 .64 .70 .75 .80 .84 .86 K S21 (dB) 15.8 15.8 15.7 15.6 15.3 14.9 14.6 14.2 13.8 13.4 13.0 12.7 12.3 11.9 11.6 11.2 10.8 10.5 10.1 9.8 9.5 9.1 8.8 8.2 7.5 6.9 6.3 5.7 MAG2 (dB) 35.6 32.8 29.9 26.6 23.4 21.6 20.4 19.5 18.7 18.1 17.6 17.1 16.6 16.2 15.8 15.5 15.1 14.8 14.5 14.2 13.8 13.6 13.3 12.7 12.1 11.5 10.9 10.3 0.1 .999 -1.4 6.161 178.9 .002 0.2 .999 -2.7 6.156 177.8 .003 0.5 .998 -6.7 6.121 174.5 .006 1.0 .995 -13.2 6.030 169.2 .013 2.0 .982 -25.6 5.811 159.3 .027 3.0 .965 -37.1 5.579 149.9 .039 4.0 .945 -47.9 5.345 141.0 .049 5.0 .923 -58.1 5.120 132.6 .058 6.0 .900 -67.6 4.902 124.6 .066 7.0 .878 -76.5 4.692 117.0 .073 8.0 .856 -84.9 4.493 109.7 .079 9.0 .835 -92.8 4.303 102.8 .085 10.0 .816 -100.2 4.122 96.1 .090 11.0 .797 -107.3 3.951 89.7 .095 12.0 .780 -113.9 3.788 83.6 .099 13.0 .764 -120.3 3.634 77.7 .103 14.0 .749 -126.3 3.488 72.0 .107 15.0 .734 -132.1 3.350 66.5 .111 16.0 .720 -137.7 3.219 61.1 .115 17.0 .706 -143.1 3.095 56.0 .119 18.0 .692 -148.2 2.977 51.0 .123 19.0 .679 -153.3 2.865 46.2 .126 20.0 .665 -158.2 2.759 41.5 .130 22.0 .637 -167.7 2.562 32.5 .138 24.0 .609 -176.9 2.384 23.9 .147 26.0 .583 174.1 2.222 15.7 .157 28.0 .562 165.2 2.076 7.7 .167 30.0 .552 156.4 1.942 0.0 .180 Notes: 1. S Parameters include Bond Wires. Gate: Total 2 wire(s), 1 per bond pad 0.0132" (335 m) long each wire. Drain: Total 2 wire(s), 1 per bond pad 0.0094" (240 m) long each wire. Source: Total 4 wire(s), 2 per side, 0.0070" (178 m) long each wire. Wire: 0.0007" (17.8 m) dia. gold. 2. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain, MSG = Maximum Stable Gain OUTLINE DIMENSIONS NE24200 (CHIP) (Units in m) 40040 64 56 112 61 TYPICAL PERFORMANCE CURVES (TA = 25C) TRANSCONDUCTANCE vs. DRAIN CURRENT VDS = 2.0 V 100 Transconductance, gm (mS) D D 53 80 60 35035 S G G S 60 150 96 41 40 20 113 84 0 45 47 40 0 5 10 15 20 25 30 35 40 45 50 Chip Thickness: 140 20 m Note: All dimensions are typical unless otherwise specified. EXCLUSIVE NORTH AMERICAN AGENT FOR Drain Current, IDS (mA) RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 10/12/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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